TY - JOUR ID - 70003 TI - Fabrication of p-Type Nano-porous Silicon Prepared by Electrochemical Etching Technique in HF-Ethanol and HF-Ethanol-H2O Solutions JO - Advanced Ceramics Progress JA - ACP LA - en SN - 2423-7477 AU - Massoudi, Abozar AU - Azim-Araghi, Mohammad Esmaeil AU - Keihan Asl, Mahvash AD - Semiconductors , Materials and Energy Research Center (MERC) AD - physics, kharazmi University Y1 - 2015 PY - 2015 VL - 1 IS - 2 SP - 24 EP - 28 KW - Nano KW - porous Silicon KW - mesopore KW - Electrochemical Etch Tuning KW - HF KW - Ethanol KW - H2O DO - 10.30501/acp.2015.70003 N2 - Nano-porous silicon were simply prepared from p-type single crystalline silicon wafer by electrochemical etching technique via exerting constant current density in two different HF-Ethanol and HF-Ethanol-H2O solutions. The mesoporous silicon layers were characterized by field emission scanning electron microscopy and scanning electron microscopy. The results demonstrate that the width of nano-pores changes from 7 nm to 60 nm by varying current density from 10 mA/Cm 2 to 40 mA/Cm 2, respectively and the depth of nano-pores also alters by applying different values of etching duration. It is concluded that varying current density leads to different width of pores while varying etching duration results in various depth of pores. Such etch tuning process is applicable for fabricating different nano-sized porous silicon for many modern electronic devices. UR - https://www.acerp.ir/article_70003.html L1 - https://www.acerp.ir/article_70003_6d9da19daa79139581be08bb74875d09.pdf ER -