Vol. 3, No. 2 (Spring 2017) 38-44







Abstract



 Login
 News
 Archive
 Coming Issue
 Current Issue
 Call for Paper
 Full Text
 Aims and Scope
 Links
 Online Submission
 People
 Search

 
   

Vol. 3, No. 2 (Spring 2017) 38-44   

Link: http://www.acerp.ir/Vol3/No2/6.pdf
 
Downloaded: 12   Viewed: 349

  Nanowires fine tunable fabrication by varying the concentration ratios, the etchant and the plating spices in metal-assisted chemical etching of <111> silicon wafer.
 
M. Shavandi, A. Massoudi, Ali Khanlarkhani and M. Moradi
 
( Received: April 23, 2017 – Accepted: July 11, 2017 )
 
 

Abstract    The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio of concentration to form the silicon nanowires obeyed the [HF]/[H2O2]  = R equation when R= 2.5, 3 and 3.5 and any deviation of these ratio, cause to destruction of wire-like structure. Moreover, the critical etching rates to form the SiNWs are in the range of 4nm/s to 5nm/ s.

 

Keywords    Metal-assisted chemical etching; Silicon nanowires; Etching rate; Concentration ratios.

 

Download PDF