An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and algorithm. Obtained results were compared with the results of calibrated ECV instrument and dopant profile-resistivity correspondence method. Cross-sectional imaging was used for confirming the estimated dopant diffusion depth.
Saraei,A , Eshraghi,M J , Tajabadi,F and Massoudi,A . (2017). Implementation of EIS for dopant profile analysis in n-type silicon. Advanced Ceramics Progress, 3(1), 16-20. doi: 10.30501/acp.2017.70040
MLA
Saraei,A , , Eshraghi,M J , , Tajabadi,F , and Massoudi,A . "Implementation of EIS for dopant profile analysis in n-type silicon", Advanced Ceramics Progress, 3, 1, 2017, 16-20. doi: 10.30501/acp.2017.70040
HARVARD
Saraei A, Eshraghi M J, Tajabadi F, Massoudi A. (2017). 'Implementation of EIS for dopant profile analysis in n-type silicon', Advanced Ceramics Progress, 3(1), pp. 16-20. doi: 10.30501/acp.2017.70040
CHICAGO
A Saraei, M J Eshraghi, F Tajabadi and A Massoudi, "Implementation of EIS for dopant profile analysis in n-type silicon," Advanced Ceramics Progress, 3 1 (2017): 16-20, doi: 10.30501/acp.2017.70040
VANCOUVER
Saraei A, Eshraghi M J, Tajabadi F, Massoudi A. Implementation of EIS for dopant profile analysis in n-type silicon. ACERP. 2017;3(1):16-20. doi: 10.30501/acp.2017.70040
