TY - JOUR ID - 70040 TI - Implementation of EIS for dopant profile analysis in n-type silicon JO - Advanced Ceramics Progress JA - ACP LA - en SN - 2423-7477 AU - Saraei, Ahmad AU - Eshraghi, Mohamad Javad AU - Tajabadi, Fariba AU - Massoudi, Abouzar AD - Semiconductors, Institute of materials and energy AD - Semiconductor, Merc AD - Nanomaterials and Advanced Materials, Institute of materials and energy Y1 - 2017 PY - 2017 VL - 3 IS - 1 SP - 16 EP - 20 KW - ECV KW - Depth profile KW - Doping DO - 10.30501/acp.2017.70040 N2 - An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and algorithm. Obtained results were compared with the results of calibrated ECV instrument and dopant profile-resistivity correspondence method. Cross-sectional imaging was used for confirming the estimated dopant diffusion depth. UR - https://www.acerp.ir/article_70040.html L1 - https://www.acerp.ir/article_70040_bad87ed3acc84933b43394825633cf58.pdf ER -