Construction of 0D/3D ZnWO4-MoS2 heterojunction with enhanced charge carrier separation for decomposition of organic pollutants under visible light irradiation

Document Type : Original Research Article

Authors

1 Department of materials engineering, Isfahan university of technology

2 Department of Materials Science Engineering, University of Maragheh, Maragheh, Iran.

Abstract

In this work, 0D/3D ZnWO4-MoS2 heterojunction was prepared through a two-step hydrothermal procedure and applied for degradation of MB dye from aqeous solution under visible light irradiation. XRD and FESEM analyses were conducted to conform the sucussful incorporation of ZnWO4 nanoparticles over flowerlike MoS2 structure. Based on the obtained results, heterojunction with 30% wt. of ZnWO4 revealed the best photocatalytic performance compared to the other heterojunction samples. This improvement is mainly ascribed to the p-n heterojunction effect in which the photoinduced electrons and holes could be effectevly separated on the different semiconductors and facilitate the formation of radical active species, resulting in efficient enhancement of photocatalytic performance. Brsides, the results obtained from DRS analysis confirmed that visible light absorption of the heterojunction samples is decreased as the ZnWO4 content exceed 30% wt. which is corresponded to the shielding effect of UV-responsive ZnWO4 component. Hydroxyle radicals was determined as the main active species responsible for photodecomposition of MB.

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Articles in Press, Accepted Manuscript
Available Online from 30 September 2023
  • Receive Date: 14 October 2023
  • Revise Date: 07 November 2023
  • Accept Date: 26 November 2023