In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications. Increasing anodizing duration will increase nanotube lengths which itself causes increase in high resistance and low resistance difference.
Saraei, A., Eshraghi, M., & Massoudi, A. (2016). Investigation of resistive switching in anodized titanium dioxide thin films. Advanced Ceramics Progress, 2(3), 34-37. doi: 10.30501/acp.2016.70029
MLA
Ahmad Saraei; Mohammad Eshraghi; Abozar Massoudi. "Investigation of resistive switching in anodized titanium dioxide thin films". Advanced Ceramics Progress, 2, 3, 2016, 34-37. doi: 10.30501/acp.2016.70029
HARVARD
Saraei, A., Eshraghi, M., Massoudi, A. (2016). 'Investigation of resistive switching in anodized titanium dioxide thin films', Advanced Ceramics Progress, 2(3), pp. 34-37. doi: 10.30501/acp.2016.70029
VANCOUVER
Saraei, A., Eshraghi, M., Massoudi, A. Investigation of resistive switching in anodized titanium dioxide thin films. Advanced Ceramics Progress, 2016; 2(3): 34-37. doi: 10.30501/acp.2016.70029
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