Investigation of resistive switching in anodized titanium dioxide thin films


1 Semiconductors, Institute of materials and energy

2 Semiconductors, Materials and Energy Research Center (MERC)

3 Semiconductors , Materials and Energy Research Center (MERC)


In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications.  Increasing anodizing duration will increase nanotube lengths which itself causes increase in high resistance and low resistance difference.