An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and algorithm. Obtained results were compared with the results of calibrated ECV instrument and dopant profile-resistivity correspondence method. Cross-sectional imaging was used for confirming the estimated dopant diffusion depth.
Saraei, A., Eshraghi, M. J., Tajabadi, F., & Massoudi, A. (2017). Implementation of EIS for dopant profile analysis in n-type silicon. Advanced Ceramics Progress, 3(1), 16-20. doi: 10.30501/acp.2017.70040
MLA
Ahmad Saraei; Mohamad Javad Eshraghi; Fariba Tajabadi; Abouzar Massoudi. "Implementation of EIS for dopant profile analysis in n-type silicon". Advanced Ceramics Progress, 3, 1, 2017, 16-20. doi: 10.30501/acp.2017.70040
HARVARD
Saraei, A., Eshraghi, M. J., Tajabadi, F., Massoudi, A. (2017). 'Implementation of EIS for dopant profile analysis in n-type silicon', Advanced Ceramics Progress, 3(1), pp. 16-20. doi: 10.30501/acp.2017.70040
VANCOUVER
Saraei, A., Eshraghi, M. J., Tajabadi, F., Massoudi, A. Implementation of EIS for dopant profile analysis in n-type silicon. Advanced Ceramics Progress, 2017; 3(1): 16-20. doi: 10.30501/acp.2017.70040