An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and algorithm. Obtained results were compared with the results of calibrated ECV instrument and dopant profile-resistivity correspondence method. Cross-sectional imaging was used for confirming the estimated dopant diffusion depth.
Saraei,A. , Eshraghi,M. J. , Tajabadi,F. and Massoudi,A. (2017). Implementation of EIS for dopant profile analysis in n-type silicon. Advanced Ceramics Progress, 3(1), 16-20. doi: 10.30501/acp.2017.70040
MLA
Saraei,A. , , Eshraghi,M. J. , , Tajabadi,F. , and Massoudi,A. . "Implementation of EIS for dopant profile analysis in n-type silicon", Advanced Ceramics Progress, 3, 1, 2017, 16-20. doi: 10.30501/acp.2017.70040
HARVARD
Saraei A., Eshraghi M. J., Tajabadi F., Massoudi A. (2017). 'Implementation of EIS for dopant profile analysis in n-type silicon', Advanced Ceramics Progress, 3(1), pp. 16-20. doi: 10.30501/acp.2017.70040
CHICAGO
A. Saraei, M. J. Eshraghi, F. Tajabadi and A. Massoudi, "Implementation of EIS for dopant profile analysis in n-type silicon," Advanced Ceramics Progress, 3 1 (2017): 16-20, doi: 10.30501/acp.2017.70040
VANCOUVER
Saraei A., Eshraghi M. J., Tajabadi F., Massoudi A. Implementation of EIS for dopant profile analysis in n-type silicon. ACERP, 2017; 3(1): 16-20. doi: 10.30501/acp.2017.70040
