Implementation of EIS for dopant profile analysis in n-type silicon


1 Semiconductors, Institute of materials and energy

2 Semiconductor, Merc

3 Nanomaterials and Advanced Materials, Institute of materials and energy


An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and algorithm. Obtained results were compared with the results of calibrated ECV instrument and dopant profile-resistivity correspondence method. Cross-sectional imaging was used for confirming the estimated dopant diffusion depth.