Fabrication of p-Type Nano-porous Silicon Prepared by Electrochemical Etching Technique in HF-Ethanol and HF-Ethanol-H2O Solutions

Massoudi, Abozar; Azim-Araghi, Mohammad Esmaeil; Keihan Asl, Mahvash

doi:10.30501/acp.2015.70003

Fabrication of p-Type Nano-porous Silicon Prepared by Electrochemical Etching Technique in HF-Ethanol and HF-Ethanol-H2O Solutions

Authors

Abozar Massoudi ¹

Mohammad Esmaeil Azim-Araghi ²

Mahvash Keihan Asl ²

¹ Semiconductors , Materials and Energy Research Center (MERC)

² physics, kharazmi University

10.30501/acp.2015.70003

Abstract

Nano-porous silicon were simply prepared from p-type single crystalline silicon wafer by electrochemical etching technique via exerting constant current density in two different HF-Ethanol and HF-Ethanol-H2O solutions. The mesoporous silicon layers were characterized by field emission scanning electron microscopy and scanning electron microscopy. The results demonstrate that the width of nano-pores changes from 7 nm to 60 nm by varying current density from 10 mA/Cm 2 to 40 mA/Cm 2, respectively and the depth of nano-pores also alters by applying different values of etching duration. It is concluded that varying current density leads to different width of pores while varying etching duration results in various depth of pores. Such etch tuning process is applicable for fabricating different nano-sized porous silicon for many modern electronic devices.

Keywords

Nano

porous Silicon

mesopore

Electrochemical Etch Tuning

Ethanol

H2O

Subjects